PART |
Description |
Maker |
IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
|
IRF[International Rectifier]
|
IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道,功率MOS场效应管) 00V安培,N沟道功率MOSFET(为200V9A条,沟道,功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
IRFU9220 IRFR9220 IRFR9220TRR IRFR9220PBF IRFR9220 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package -200V Single P-Channel HEXFET Power MOSFET in a D-Pak package HEXFET? Power MOSFET Power MOSFET(Vdss=-200V, Rds(on)=1.5ohm, Id=-3.6A) 3.6 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
IRF[International Rectifier] VISHAY INTERTECHNOLOGY INC
|
MRF6S9060NR1 MRF6S9060MR1 MRF6S9060NBR1 MRF6S9060M |
RF Power Field Effect Transistors CAP 10PF 200V 200V X7R RAD.20 .20X.20 BULK P-MIL-PRF-39014 CAP CER .10UF 100V 20% AXIAL
|
Freescale (Motorola) 飞思卡尔半导体(中国)有限公司
|
STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR From old datasheet system N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp. IRF[International Rectifier]
|
FQE10N20LC FQE10N20LCTU |
200V N-Channel Advance Q-FET C-Series 200V Logic N-Channel MOSFET 4 A, 200 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series 200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|